■ 제품필수정보

제조사	Infineon
제조사품명	AUIRFP4110
간략설명	Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC Infineon AUIRFP4110

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 180 A Maximum Drain Source Voltage = 100 V
패키지 = TO-247AC
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 0.045 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 2
시리즈 = HEXFET The Infineon AUIRFP4110 specifically designed for Automotive applications, this HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.Advanced process technology Ultra-low on-resistance 175°C operating temperature Fast switching Repetitive avalanche allowed up to Tjmax