■ 제품필수정보

제조사	Infineon
제조사품명	IPT60R150G7XTMA1
간략설명	N-Channel MOSFET, 23 A, 650 V, 8-Pin HSOF-8 Infineon IPT60R150G7XTMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 23 A Maximum Drain Source Voltage = 650 V
패키지 = HSOF-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.15 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = C7 GOLD The Infineon CoolMOS C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS??C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G Enables best-in-class R DS(on) in smallest footprint Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (??nH) Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads Enables improved thermal performance R th Higher efficiency due to the improved C7 Gold technology and faster switching Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements