■ 제품필수정보

제조사	Infineon
제조사품명	IPN80R900P7ATMA1
간략설명	N-Channel MOSFET, 6 A, 800 V, 3-Pin SOT-223 Infineon IPN80R900P7ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 6 A Maximum Drain Source Voltage = 800 V
패키지 = SOT-223
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.9 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V
칩당 요소 수 = 1
시리즈 = CoolMOS P7 The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs