■ 제품필수정보

제조사	Infineon
제조사품명	IPD95R2K0P7ATMA1
간략설명	N-Channel MOSFET, 4 A, 950 V, 3-Pin DPAK Infineon IPD95R2K0P7ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 4 A Maximum Drain Source Voltage = 950 V
패키지 = TO-252
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.002 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V
칩당 요소 수 = 1
시리즈 = CoolMOS P7 The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS??P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS??C3, the 950V CoolMOS??P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS??P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS??P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability