■ 제품필수정보

제조사	Infineon
제조사품명	IRFR4105TRPBF
간략설명	N-Channel MOSFET, 27 A, 55 V, 3-Pin DPAK Infineon IRFR4105TRPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 27 A Maximum Drain Source Voltage = 55 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.045 Ω Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = HEXFET The Infineon HEXFET series 55V N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering technique.Ultra Low On-Resistance Fast Switching Lead free