■ 제품필수정보

제조사	Infineon
제조사품명	IPD35N10S3L26ATMA1
간략설명	N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD35N10S3L26ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 35 A Maximum Drain Source Voltage = 100 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.026 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.4V
칩당 요소 수 = 1
시리즈 = OptiMOS??T The Infineon OptiMOS??T series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.N-channel - Enhancement mode MSL1 up to 260°C peak reflow 175°C operating temperature