■ 제품필수정보

제조사	Infineon
제조사품명	IRFR4104TRPBF
간략설명	N-Channel MOSFET, 119 A, 40 V, 3-Pin DPAK Infineon IRFR4104TRPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 119 A Maximum Drain Source Voltage = 40 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 5.5 mO Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1 The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.Advanced Process Technology Ultra Low On-Resistance 1 75°C Operating Temperature Fast Switching R repetitive Avalanche Allowed up to Tjmax L ead-Free