■ 제품필수정보

제조사	Infineon
제조사품명	IKW75N65EH5XKSA1
간략설명	Infineon IKW75N65EH5XKSA1 IGBT, 90 A 650 V, 3-Pin PG-TO247-3

■ 제품사양

Maximum Continuous Collector Current = 90 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20 V, ±30 V Maximum Power Dissipation = 395 W
패키지 = PG-TO247-3
핀수 = 3 The Infineon insulated-gate bipolar transistor with high speed H5 technology.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference