■ 제품필수정보

제조사	Infineon
제조사품명	IKD15N60RATMA1
간략설명	Infineon IKD15N60RATMA1 IGBT, 30 A 600 V, 3-Pin PG-TO252-3

■ 제품사양

Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 250 W
패키지 = PG-TO252-3
핀수 = 3 The Infineon insulated-gate bipolar transistor with integrated diode in packages offering space saving advantage.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference