■ 제품필수정보

제조사	Infineon
제조사품명	IKB40N65ES5ATMA1
간략설명	Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

■ 제품사양

Maximum Continuous Collector Current = 79 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20 V, ±30 V Maximum Power Dissipation = 230 W
패키지 = PG-TO263-3
핀수 = 3 The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference