■ 제품필수정보

제조사	Infineon
제조사품명	IKB40N65EF5ATMA1
간략설명	Infineon IKB40N65EF5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO263-3

■ 제품사양

Maximum Continuous Collector Current = 74 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20 V, ±30 V Maximum Power Dissipation = 250 W
패키지 = PG-TO263-3
핀수 = 3 The Infineon high speed fast switching insulated-gate bipolar transistor with full current rated rapid 1 fast and soft antiparallel diode.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference