■ 제품필수정보

제조사	Infineon
제조사품명	IHW40N120R5XKSA1
간략설명	Infineon IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3

■ 제품사양

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20 V, ±25 V Maximum Power Dissipation = 394 W
패키지 = PG-TO247-3
핀수 = 3 The Infineon insulated-gate bipolar transistor with powerful monolithic body diode with low forward voltage designed for soft commutation.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference