■ 제품필수정보
제조사 |
Infineon |
제조사품명 |
IRF8910TRPBF |
간략설명 |
N-Channel MOSFET, 10 A, 20 V, 8-Pin SO-8 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 10 A Maximum Drain Source Voltage = 20 V
패키지 = SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.0134 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.55V Transistor Material = Si
시리즈 = HEXFET The Infineon HEXFET Power MOSFET has 20V maximum drain source voltage in a SO-8 package. It has application as dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box.Lead-Free Low RDS(on) Ultra-Low Gate Impedance Dual N-Channel MOSFET