■ 제품필수정보

제조사	Infineon
제조사품명	IPB60R180C7ATMA1
간략설명	N-Channel MOSFET, 13 A, 600 V, 3-Pin D2PAK

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 13 A Maximum Drain Source Voltage = 600 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.18 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = 600V CoolMOS??C7 The Infineon 600V Cool MOS??C7 super junction (SJ) MOSFET series offers a ??0% reduction in turn-off losses (E oss ) compared to the Cool MOS??CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyper data centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by Cool MOS??C7.
이득s of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V Cool MOS??C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ??0% for PSU energy loss.Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode