■ 제품필수정보

제조사	Infineon
제조사품명	BSR315PH6327XTSA1
간략설명	P-Channel MOSFET, 620 mA, 60 V, 3-Pin SC-59

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 620 mA Maximum Drain Source Voltage = 60 V
패키지 = SC-59
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.8 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V
칩당 요소 수 = 1
시리즈 = SIPMOS® The Infineon SIPMOS® Small-Signal-Transistor P-channel enhancement mode Field-Effect Transistor (FET), -20V maximum drain source voltage with SOT-23 package type. The Infineon??s highly innovative OptiMOS??families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. The BSS84P is a p-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.Enhancement mode Logic level Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating