■ 제품필수정보

제조사	Infineon
제조사품명	BSC034N03LSGATMA1
간략설명	N-Channel MOSFET, 100 A, 30 V, 8-Pin SuperSO8 5 x 6

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 100 A Maximum Drain Source Voltage = 30 V
패키지 = SuperSO8 5 x 6
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.0051 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.2V
칩당 요소 수 = 1
시리즈 = OptiMOS The Infineon OptiMOS?? Power-MOSFET series has 30V maximum drain source voltage with SuperSO8 5x6 package type. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS??25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. OptiMOS??30V products are tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life. Available in half bridge configuration (power stage 5x6).Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance