■ 제품필수정보

제조사	Infineon
제조사품명	IPD80R3K3P7ATMA1
간략설명	N-Channel MOSFET, 1.9 A, 800 V, 3-Pin DPAK Infineon IPD80R3K3P7ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 1.9 A Maximum Drain Source Voltage = 800 V
패키지 = TO-252
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 3.3 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Transistor Material = Si
시리즈 = CoolMOS P7 The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon??s over 18 years pioneering super junction technology innovation. These are easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs. These are recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power.It comes with Fully optimized portfolio Integrated Zener Diode ESD protection