■ 제품필수정보

제조사	Infineon
제조사품명	IPB024N10N5ATMA1
간략설명	N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK Infineon IPB024N10N5ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 180 A Maximum Drain Source Voltage = 100 V
패키지 = TO-263-7
장착형태 = Surface Mount
핀수 = 7 Maximum Drain Source Resistance = 0.0024 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.8V
칩당 요소 수 = 1
시리즈 = OptiMOS 5 The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.100% avalanche tested Qualified according to JEDEC for target applications