■ 제품필수정보

제조사	Infineon
제조사품명	IPA60R180P7SXKSA1
간략설명	N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-220 FP Infineon IPA60R180P7SXKSA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 18 A Maximum Drain Source Voltage = 600 V
패키지 = TO-220 FP
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 0.18 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = CoolMOS P7 The Infineon CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.Excellent ESD robustness >2kV (HBM) for all products Suitable for hard and soft switching due to an outstanding commutation ruggedness