■ 제품필수정보

제조사	Infineon
제조사품명	IPD80R1K4CEATMA1
간략설명	N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 3.9 A Maximum Drain Source Voltage = 800 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 1.4 Ω Maximum Gate Threshold Voltage = 3.9V
칩당 요소 수 = 1
시리즈 = CoolMOS CE This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.It is RoHS compliant