■ 제품필수정보

제조사	Infineon
제조사품명	IPB017N10N5LFATMA1
간략설명	N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB017N10N5LFATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 180 A Maximum Drain Source Voltage = 100 V
패키지 = D2PAK-7
장착형태 = Surface Mount
핀수 = 7 Maximum Drain Source Resistance = 0.0017 Ω Maximum Gate Threshold Voltage = 4.1V
칩당 요소 수 = 1
시리즈 = OptiMOS This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.It is ideal for hot-swap and e-fuse applications