■ 제품필수정보

제조사	STMicroelectronics
제조사품명	SCTWA90N65G2V-4
간략설명	SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 STMicroelectronics SCTWA90N65G2V-4

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 119 A Maximum Drain Source Voltage = 650 V
패키지 = HiP247-4
장착형태 = Through Hole
핀수 = 4 Maximum Drain Source Resistance = 0.024 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Transistor Material = SiC
시리즈 = SCTWA90N65G2V-4 The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.High speed switching performance Very high operating junction temperature capability Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Source sensing pin for increased efficiency