■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STWA68N65DM6
간략설명	N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STMicroelectronics STWA68N65DM6

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 48 A Maximum Drain Source Voltage = 650 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 0.059 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.75V
칩당 요소 수 = 1
시리즈 = STWA68N65DM6 MDMesh M6 MOSFET N-CHThe STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converter.Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness