■ 제품필수정보

제조사	STMicroelectronics
제조사품명	SCTWA40N120G2V-4
간략설명	SiC N-Channel MOSFET, 45 A, 1200 V, 4-Pin HiP247-4 STMicroelectronics SCTWA40N120G2V-4

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 1200 V
패키지 = HiP247-4
장착형태 = Through Hole
핀수 = 4 Maximum Drain Source Resistance = 0.07 Ω Transistor Material = SiC
시리즈 = SCTWA40N120G2V-4 SiC MOSFETThe STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.Very low switching losses Low power losses at high temperatures Higher operating temperature (up to 200 ?C) Body diode with no recovery losses Easy to drive