■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STW68N65DM6-4AG
간략설명	N-Channel MOSFET, 72 A, 650 V, 4-Pin TO-247-4 STMicroelectronics STW68N65DM6-4AG

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 72 A Maximum Drain Source Voltage = 650 V
패키지 = TO-247-4
장착형태 = Through Hole
핀수 = 4 Maximum Drain Source Resistance = 39 mΩ Maximum Gate Threshold Voltage = 4.75V
칩당 요소 수 = 1 The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.Designed for automotive applications Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Excellent switching performance thanks to the extra driving source pin Zener-protected