■ 제품필수정보
제조사 |
STMicroelectronics |
제조사품명 |
STPSC10H12B2-TR |
간략설명 |
STMicroelectronics 1200V 10A, Diode, 3-Pin DPAK HV 2L STPSC10H12B2-TR |
■ 제품사양
장착형태 = Surface Mount
패키지 = DPAK HV 2L Maximum Continuous Forward Current = 10A Peak Reverse Repetitive Voltage = 1200V
핀수 = 3
칩당 요소 수 = 1 The STMicroelectronics 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery Operating Tj from -40 °C to 175 °C Low VF DPAK HV creepage distance (anode to cathode) = 3 mm min. ECOPACK2 compliant