■ 제품필수정보

제조사	Vishay
제조사품명	SQJ912DEP-T1_GE3
간략설명	Dual N-Channel MOSFET, 30 A, 40 V, 6-Pin PowerPAK SO-8L Dual Vishay SQJ912DEP-T1_GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 40 V
패키지 = PowerPAK SO-8L Dual
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 0.0059 Ω Maximum Gate Threshold Voltage = 1.5 ??2.5V
칩당 요소 수 = 2 The Vishay Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK SO-8L package type.TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested