■ 제품필수정보

제조사	Vishay
제조사품명	SiSS30ADN-T1-GE3
간략설명	N-Channel MOSFET, 54.7 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS30ADN-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 54.7 A Maximum Drain Source Voltage = 80 V
패키지 = PowerPAK 1212-8S
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.0074 Ω Maximum Gate Threshold Voltage = 2 ??3.5V
칩당 요소 수 = 1 The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 54.7 A drain current.TrenchFET Gen IV power MOSFET Very low RDS x Qg figure-of-merit (FOM) Tuned for the lowest RDS x Qoss FOM 100 % Rg and UIS tested