■ 제품필수정보

제조사	Vishay
제조사품명	SIR178DP-T1-RE3
간략설명	N-Channel MOSFET, 430 A, 20 V, 8-Pin PowerPAK SO-8

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 430 A Maximum Drain Source Voltage = 20 V
패키지 = PowerPAK SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.00031 Ω Maximum Gate Threshold Voltage = 0.6 ??1.5V
칩당 요소 수 = 1 The Vishay N-Channel 20 V (D-S) MOSFET has PowerPAK SO-8 package type with 430 A drain current.TrenchFET Gen IV power MOSFET Very low RDS x Qg figure-of-merit (FOM) Leadership RDS(ON) minimizes power loss from conduction 2.5 V ratings and operation at low voltage gate drive 100 % Rg and UIS tested