■ 제품필수정보
제조사 |
Vishay |
제조사품명 |
SIHU2N80AE-GE3 |
간략설명 |
N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK Vishay SIHU2N80AE-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 2.9 A Maximum Drain Source Voltage = 800 V
패키지 = IPAK (TO-251)
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 2.5 Ω Maximum Gate Threshold Voltage = 2 ??4V
칩당 요소 수 = 1
시리즈 = E The Vishay E
시리즈 Power MOSFET has IPAK (TO-251) package type.Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Integrated Zener diode ESD protection