■ 제품필수정보

제조사	Vishay
제조사품명	SIHB11N80AE-GE3
간략설명	N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK Vishay SIHB11N80AE-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 8 A Maximum Drain Source Voltage = 800 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.391 Ω Maximum Gate Threshold Voltage = 2 ??4V
칩당 요소 수 = 1
시리즈 = E The Vishay E
시리즈 Power MOSFET has D2PAK (TO-263) package type with single configuration.Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Integrated Zener diode ESD protection