■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STGWA20H65DFB2
간략설명	STMicroelectronics STGWA20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247

■ 제품사양

Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 147 W
패키지 = TO-247
핀수 = 3 Transistor Configuration = Single The STMicroelectronics Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO-247 long leads package.Maximum junction temperature : TJ = 175 °C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient