■ 제품필수정보

제조사	Vishay
제조사품명	SISS80DN-T1-GE3
간략설명	N-Channel MOSFET, 169 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SISS80DN-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 169 A Maximum Drain Source Voltage = 20 V
패키지 = PowerPAK 1212-8S
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.00092 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1.5V
칩당 요소 수 = 1
시리즈 = SiSS80DN The Vishay N-Channel 20 V (D-S) MOSFET is less than 0.92 mO in a package footprint of 10.89 mm2. It has optimized Qg, Qgd, and Qgd/Qgs ratio reduce switching related power loss.100 % Rg and UIS tested TrenchFET Gen IV power MOSFET