■ 제품필수정보

제조사	Vishay
제조사품명	SISF06DN-T1-GE3
간략설명	Dual N-Channel MOSFET, 101 A, 30 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF06DN-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 101 A Maximum Drain Source Voltage = 30 V
패키지 = PowerPAK 1212-8SCD
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.0045 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.3V
칩당 요소 수 = 2
시리즈 = SiSF06DN The Vishay Common Drain Dual N-Channel 30 V (S1-S2) MOSFET is an integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package.Very low source-to-source on resistance TrenchFET Gen IV power MOSFET