■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SIHU5N80AE-GE3 |
| 간략설명 |
N-Channel MOSFET, 4.4 A, 800 V, 3-Pin IPAK Vishay SIHU5N80AE-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 4.4 A Maximum Drain Source Voltage = 800 V
패키지 = IPAK (TO-251)
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 1.35 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = SiHU5N80AE The Vishay E
시리즈 Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).Ultra low gate charge (Qg) Avalanche energy rated (UIS)
