■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STGWA50HP65FB2
간략설명	STMicroelectronics STGWA50HP65FB2 IGBT, 86 A 650 V, 3-Pin TO-247

■ 제품사양

Maximum Continuous Collector Current = 86 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Number of Transistors = 1
패키지 = TO-247 Channel
타입 = N
핀수 = 3 Transistor Configuration = Single The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.Maximum junction temperature of 175°C Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive temperature coefficient