■ 제품필수정보

제조사	Onsemi
제조사품명	NTH4L080N120SC1
간략설명	SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247-4 onsemi NTH4L080N120SC1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 29 A Maximum Drain Source Voltage = 1200 V
패키지 = TO-247-4
장착형태 = Through Hole
핀수 = 4 Maximum Drain Source Resistance = 0.11 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.3V Transistor Material = SiC
시리즈 = NTH The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.110mO drain to source on resistance Ultra low gate charge 100% avalanche tested Pb free RoHS compliant