■ 제품필수정보

제조사	STMicroelectronics
제조사품명	SCT20N120AG
간략설명	SiC N-Channel SiC Power Module, 16 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT20N120AG

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 16 A Maximum Drain Source Voltage = 1200 V
패키지 = HiP247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 0.52 Ω Channel Mode = Depletion Maximum Gate Threshold Voltage = 25V Transistor Material = SiC
시리즈 = SCT The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.Very fast and robust intrinsic body diode Low capacitance