■ 제품필수정보

제조사	Vishay
제조사품명	SIHU6N80AE-GE3
간략설명	N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK Vishay SIHU6N80AE-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 3.2 A, 5 A Maximum Drain Source Voltage = 850 V
패키지 = IPAK (TO-251)
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 0.95 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = E The Vishay SIHU6N80AE-GE3 is a E series power MOSFET.Low figure-of-merit Low effective capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Integrated Zener diode ESD protection