■ 제품필수정보

제조사	Vishay
제조사품명	SiZ240DT-T1-GE3
간략설명	Dual N-Channel MOSFET, 47 A, 48 A, 40 V, 8-Pin PowerPAIR 3 x 3S Vishay SiZ240DT-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 47 A, 48 A Maximum Drain Source Voltage = 40 V
패키지 = PowerPAIR 3 x 3S
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.0133 Ω, 0.00805 Ω, 0.00841 Ω, 0.01225 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.4V
칩당 요소 수 = 2
시리즈 = TrenchFET® Gen IV The Vishay SiZ240DT-T1-GE3 is a dual N-channel 40V (D-S) MOSFETs.TrenchFET Gen IV power MOSFETs Integrated MOSFET half-bridge power stage 100 % Rg and UIS tested Optimized Qgs/Qgs ratio improves switching characteristics