■ 제품필수정보

제조사	Vishay
제조사품명	SiSS63DN-T1-GE3
간략설명	P-Channel MOSFET, 127.5 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS63DN-T1-GE3

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 127.5 A Maximum Drain Source Voltage = 20 V
패키지 = PowerPAK 1212-8S
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.007 Ω, 0.0027 Ω, 0.0036 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1.5V
칩당 요소 수 = 1
시리즈 = TrenchFET® Gen III The Vishay SiSS63DN-T1-GE3 is a P-channel 20V (D-S) MOSFET.TrenchFET Gen III p-channel power MOSFET Leadership RDS(on) in compact and thermally enhanced package 100 % Rg and UIS tested