■ 제품필수정보

제조사	Vishay
제조사품명	SISS50DN-T1-GE3
간략설명	N-Channel MOSFET, 108 A, 45 V, 8-Pin PowerPAK 1212-8S Vishay SISS50DN-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 108 A Maximum Drain Source Voltage = 45 V
패키지 = PowerPAK 1212-8S
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.0041 Ω, 0.00283 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.3V
칩당 요소 수 = 1
시리즈 = TrenchFET® Gen IV The Vishay SISS50DN-T1-GE3 is a N-channel 45V (D-S) MOSFET.TrenchFET Gen IV power MOSFET Very low RDS(on) in a compact and thermally enhanced package Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss 100 % Rg and UIS tested