■ 제품필수정보

제조사	Onsemi
제조사품명	NXH100B120H3Q0STG
간략설명	onsemi NXH100B120H3Q0STGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

■ 제품사양

Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 186 W
패키지 = Q0BOOST
장착형태 = Surface Mount Channel
타입 = N
핀수 = 22 Transistor Configuration = Dual
크기 = 66.2 x 32.8 x 11.9mm
최소 작동 온도 = -40 °C The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ Fast IGBT with low VCE(SAT) for high efficiency 25 A / 1600 V Bypass and Anti??parallel Diodes Low VF bypass diodes for excellent efficiency in bypass mode SiC Rectifier Specification: VF = 1.44 V SiC Diode for high speed switching Solder pin and press-fit pin options available Flexible mounting Applications MPPT Boost Stage Battery Charger Boost Stage