■ 제품필수정보
제조사 |
STMicroelectronics |
제조사품명 |
STWA75N60DM6 |
간략설명 |
N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STMicroelectronics STWA75N60DM6 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 72 A Maximum Drain Source Voltage = 600 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 36 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.75V Minimum Gate Threshold Voltage = 3.25V Maximum Power Dissipation = 446 W Transistor Configuration = Single Maximum Gate Source Voltage = ±25 V Width = 5.1mm
높이 = 21.1mm These high voltage N-channel Power MOSFETs are part of the MDmesh??DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) * area with one of the most effective switching behaviors available in the market for the most demanding high efficiency bridge topologies and ZVS phase-shift converters.Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance Extremely high dv/dt ruggedness Zener-protected