■ 제품필수정보

제조사	Onsemi
제조사품명	FGY75T95LQDT
간략설명	onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole

■ 제품사양

Maximum Collector Emitter Voltage = 950 V Maximum Power Dissipation = 453 W
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Transistor Configuration = Single
크기 = 15.87 x 4.82 x 20.82mm
최소 작동 온도 = -55 °C Trench Field Stop 4th generation Low Vcesat IGBT co??packaged with full current rated diodeMaximum Junction Temperature : TJ = 175??Positive Temperature Co??efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ.) @ IC = 75 A Fast Switching Tighten Parameter Distribution These Devices are Pb??Free