■ 제품필수정보

제조사	Onsemi
제조사품명	NVMYS025N06CLTWG
간략설명	N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NVMYS025N06CLTWGOS

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 21 A Maximum Drain Source Voltage = 60 V
패키지 = LFPAK, SOT-669
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 43 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 24 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 4.25mm Automotive Standard = AEC-Q101 Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK4 Package, Industry Standard PPAP Capable These Devices are Pb??Free