■ 제품필수정보

제조사	Onsemi
제조사품명	FCMT360N65S3
간략설명	N-Channel MOSFET, 10 A, 650 V, 4-Pin PQFN4 ON Semiconductor FCMT360N65S3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 10 A Maximum Drain Source Voltage = 650 V
패키지 = PQFN4
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 360 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 83 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V
최대 작동 온도 = +150 °C Forward Diode Voltage = 1.2V SUPERFET III MOSFET is ON Semiconductors brand-new high voltage super-junction(SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adapter and solar inverter applications. The Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources.