■ 제품필수정보

제조사	Onsemi
제조사품명	FDMS4D5N08LC
간략설명	N-Channel MOSFET, 116 A, 80 V, 8-Pin PQFN8 onsemi FDMS4D5N08LCOS

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 116 A Maximum Drain Source Voltage = 80 V
패키지 = PQFN8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 7.5 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 113.6 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 5mm
높이 = 1.05mm This N-Channel MV MOSFET is produced using ON Semiconductor??s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with soft body diode.Shielded Gate MOSFET Technology Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 37 A Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 29 A 50% Lower Qrr than Other MOSFET Suppliers Lowers Switching Noise/EMI Logic Level drive Capable Application This product is general usage and suitable for many different applications.