■ 제품필수정보

제조사	IXYS
제조사품명	IXFN60N80P
간략설명	N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 53 A Maximum Drain Source Voltage = 800 V
패키지 = SOT-227B
장착형태 = Screw Mount
핀수 = 4 Maximum Drain Source Resistance = 140 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Maximum Power Dissipation = 1.04 kW Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V Typical Gate Charge @ Vgs = 250 nC @ 10 V
시리즈 = HiperFET, Polar N-channel Power MOSFET, IXYS HiperFET??Polar??
시리즈. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET?? from IXYS