상품이미지
  •  상품이미지

MPN : S29AL008J70TFI013

Infineon NOR 8Mbit CFI Flash Memory 48-Pin TSOP, S29AL008J70TFI013
  • 브랜드

    Infineon

  • 무원상품코드

    M011007002290

  • 타입별
    RL
  • 주문가능수량

    품 절

  • 최소주문수량1,000
  • 판매단위1,000
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 1000개 ~ 2,100원

  • 수량단가2 : 2000개 ~ 2,058원

  • 수량단가3 : 4000개 ~ 2,017원


총금액
(VAT 별도)

  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 Infineon
제조사품명 S29AL008J70TFI013
간략설명 Infineon NOR 8Mbit CFI Flash Memory 48-Pin TSOP, S29AL008J70TFI013

■ 제품사양

Memory Size = 8Mbit Interface
타입 = CFI
패키지 = TSOP
핀수 = 48 Organisation = 1M x 8 bit
장착형태 = Surface Mount Cell
타입 = NOR Minimum Operating Supply Voltage = 2.7 V Maximum Operating Supply Voltage = 3.6 V Block Organisation = Asymmetrical Length = 12mm
높이 = 1.05mm Width = 18.4mm
크기 = 18.4 x 12 x 1.05mm
최소 작동 온도 = -40 °C The S29AL008J is a 8 Mbit, 3.0 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball Fine-pitch BGA (0.8 mm pitch) and 48pin TSOP packages. The word-wide data (x16) appears on DQ15??DQ0, the byte-wide (x8) data appears on DQ7??DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers. The device offers access times of up to 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. Duringerase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7(Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.

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